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FDD6780 PDF预览

FDD6780

更新时间: 2024-11-05 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 335K
描述
Power Field-Effect Transistor, 16.5A I(D), 25V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

FDD6780 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.31
Is Samacsys:N雪崩能效等级(Eas):20 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):49 A
最大漏极电流 (ID):16.5 A最大漏源导通电阻:0.0085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):33 W最大脉冲漏极电流 (IDM):70 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD6780 数据手册

 浏览型号FDD6780的Datasheet PDF文件第2页浏览型号FDD6780的Datasheet PDF文件第3页浏览型号FDD6780的Datasheet PDF文件第4页浏览型号FDD6780的Datasheet PDF文件第5页浏览型号FDD6780的Datasheet PDF文件第6页浏览型号FDD6780的Datasheet PDF文件第7页 
January 2009  
FDD6780A / FDU6780A_F071  
N-Channel PowerTrench® MOSFET  
25 V, 8.6 mΩ  
Features  
General Description  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using either  
synchronous or conventional switching PWM controllers. It has  
been optimized for low gate charge, low rDS(on) and fast  
switching speed.  
„ Max rDS(on) = 8.6 mat VGS = 10 V, ID = 16.4 A  
„ Max rDS(on) = 19.0 mat VGS = 4.5 V, ID = 12.2 A  
„ 100% UIL test  
„ RoHS Compliant  
Applications  
„ Vcore DC-DC for Desktop Computers and Servers  
„ VRM for Intermediate Bus Architecture  
D
D
G
G
G
D
S
S
Short-Lead I-PAK  
(TO-251AA)  
S
D-PAK  
(TO-252)  
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
25  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
30  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
T
48  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
16.4  
100  
24  
-Pulsed  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
mJ  
W
TC = 25 °C  
TA = 25 °C  
32.6  
3.7  
PD  
Power Dissipation  
(Note 1a)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +175  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case TO-252, TO-251  
Thermal Resistance, Junction to Ambient TO-252  
4.6  
40  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
FDD6780A  
Device  
Package  
D-PAK (TO-252)  
TO-251AA  
Reel Size  
Tape Width  
Quantity  
FDD6780A  
13 ’’  
12 mm  
N/A  
2500 units  
75 units  
FDU6780A  
FDU6780A_F071  
N/A(Tube)  
1
©2009 Fairchild Semiconductor Corporation  
FDD6780A / FDU6780A_F071 Rev.C  
www.fairchildsemi.com  

FDD6780 替代型号

型号 品牌 替代类型 描述 数据表
FDD6780A FAIRCHILD

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