Datasheet > FDD6796A

FDD6796A

更新时间： 2024-11-06 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	545K
描述
种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时）:20A;Vgs(th)(V):±20;漏源导通电阻:5.7mΩ@10V;漏源导通电阻:15mΩ@4.5V

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FDD6796A 数据手册

FDD6796A

UMW

25V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized

for low gate charge, low r_DS(on)and fast switching

speed.

Applications

•

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

Features

•

V_DS(V) = 25V

I_D= 20A (V_GS= 10V)

R_DS(ON)<5.7mΩ (V _GS= 10V)

R_DS(ON)<15mΩ (V _GS= 4.5V)

•

MOSFET Maximum Ratings ^T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

(Note 1a)

150

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

3.7

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.6

°C/W

(Note 1a)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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