May 2007
TM
UniFET
FDD6N20 / FDU6N20
tm
N-Channel MOSFET
200V, 4.5A, 0.8Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A
Low gate charge ( Typ. 4.7nC )
Low Crss ( Typ. 6.3pF )
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
D
G
G
S
I-PAK
FDU Series
G
S
D
D-PAK
FDD Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
Ratings
200
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±30
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- P uls ed
4.5
ID
D r a in C u r r e n t
A
2.7
IDM
D rai n Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
18
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
60
4.5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.0
mJ
V/ns
W
W/oC
oC
4.5
(TC = 25oC)
- Derate above 25oC
40
PD
Power Dissipation
0.32
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
3.1
Units
RθJC
RθJA
oC/W
110
©2007 Fairchild Semiconductor Corporation
FDD6N20 / FDU6N20 Rev. A
1
www.fairchildsemi.com