5秒后页面跳转
FDD6796A PDF预览

FDD6796A

更新时间: 2024-11-05 06:59:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 324K
描述
N-Channel PowerTrench® MOSFET 25 V, 5.7 mΩ

FDD6796A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.33
Is Samacsys:N雪崩能效等级(Eas):40 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):67 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.0057 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):42 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD6796A 数据手册

 浏览型号FDD6796A的Datasheet PDF文件第2页浏览型号FDD6796A的Datasheet PDF文件第3页浏览型号FDD6796A的Datasheet PDF文件第4页浏览型号FDD6796A的Datasheet PDF文件第5页浏览型号FDD6796A的Datasheet PDF文件第6页 
March 2009  
FDD6796A / FDU6796A_F071  
N-Channel PowerTrench® MOSFET  
25 V, 5.7 mΩ  
Features  
General Description  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using either  
synchronous or conventional switching PWM controllers. It has  
been optimized for low gate charge, low rDS(on) and fast  
switching speed.  
„ Max rDS(on) = 5.7 mat VGS = 10 V, ID = 20 A  
„ Max rDS(on) = 15.0 mat VGS = 4.5 V, ID = 15.2 A  
„ 100% UIL tested  
„ RoHS Compliant  
Applications  
„ Vcore DC-DC for Desktop Computers and Servers  
„ VRM for Intermediate Bus Architecture  
D
D
G
G
G
D
S
S
Short-Lead I-PAK  
(TO-251AA)  
S
D-PAK  
(TO-252)  
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
25  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
40  
T
67  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
(Note 1a)  
20  
150  
-Pulsed  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
40  
mJ  
W
TC = 25 °C  
TA = 25 °C  
42  
PD  
Power Dissipation  
3.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +175  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
3.6  
40  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
FDD6796A  
Device  
Package  
D-PAK (TO-252)  
TO-251AA  
Reel Size  
Tape Width  
Quantity  
FDD6796A  
13 ’’  
12 mm  
N/A  
2500 units  
75 units  
FDU6796A  
FDU6796A_F071  
N/A(Tube)  
©2009 Fairchild Semiconductor Corporation  
FDD6796A / FDU6796A_F071 Rev.C1  
www.fairchildsemi.com  
1

FDD6796A 替代型号

型号 品牌 替代类型 描述 数据表
FDD6796 FAIRCHILD

类似代替

N-Channel PowerTrench㈢ MOSFET 25 V, 40 A, 5.7

与FDD6796A相关器件

型号 品牌 获取价格 描述 数据表
FDD6N20 FAIRCHILD

获取价格

N-Channel MOSFET
FDD6N20TF FAIRCHILD

获取价格

N-Channel MOSFET
FDD6N20TM FAIRCHILD

获取价格

N-Channel MOSFET
FDD6N20TM ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,200V,4.5A,800mΩ,DPAK
FDD6N25 FAIRCHILD

获取价格

250V N-Channel MOSFET
FDD6N25TF FAIRCHILD

获取价格

250V N-Channel MOSFET
FDD6N25TM FAIRCHILD

获取价格

250V N-Channel MOSFET
FDD6N25TM ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,250 V,4.4 A,1.1 Ω,DPA
FDD6N50 FAIRCHILD

获取价格

500V N-Channel MOSFET
FDD6N50F FAIRCHILD

获取价格

N-Channel MOSFET 500V, 5.5A, 1.15ヘ