Datasheet > FDD6776A

FDD6776A

更新时间： 2024-09-16 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
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6页	603K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:17.7A;Vgs(th)(V):±20;漏源导通电阻:7.5mΩ@10V;漏源导通电阻:17mΩ@4.5V

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FDD6776A 数据手册

UMW

FDD6776A

25V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers. It has

been optimized for low gate charge, low

r_DS(on)and fast switching speed.

Application

•

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

Features

•

V_DS(V) = 25V

I_D= 17.7A (V_GS= 10V)

R_DS(ON)<7.5mΩ (V _GS= 10V)

R_DS(ON)< 17mΩ (V _GS= 4.5V)

•

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

17.7

100

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

3.7

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.8

°C/W

(Note 1a)

www.umw-ic.com

UTD Semiconductor Co.,Limited

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