Datasheet > FDD6690S

FDD6690S

更新时间： 2024-09-14 23:51:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	137K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 40A I(D) \| TO-252AA

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数据手册

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FDD6690S 数据手册

September 2001

FDD6690S

30V N-Channel PowerTrench SyncFET^™

General Description

Features

The FDD6690S is designed to replace

a single

• 40 A, 30 V

R_DS(ON)= 16 mΩ @ V_GS= 10 V

R_DS(ON)= 24 mΩ @ V_GS= 4.5 V

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

R_DS(ON)and low gate charge. The FDD6690S includes

an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDD6690S as the low-side switch in a synchronous

rectifier is indistinguishable from the performance of the

FDD6690A in parallel with a Schottky diode.

• Includes SyncFET Schottky body diode

• Low gate charge (17nC typical)

• High performance trench technology for extremely

low R_DS(ON)

Applications

• DC/DC converter

• Motor Drives

• High power and current handling capability

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 3)

(Note 1a)

(Note 1)

100

P_D

Power Dissipation

(Note 1a)

(Note 1b)

2.8

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.5

R_θJC

R_θJA

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD6690S

13’’

16mm

2500 units

FDD6690S Rev C (W)

2001 Fairchild Semiconductor Corporation

12 3 4 5 6 7

中文翻译

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