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FDD6760A PDF预览

FDD6760A

更新时间: 2024-11-18 06:59:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 328K
描述
N-Channel PowerTrench® MOSFET 25 V, 3.2 mΩ

FDD6760A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.34
Is Samacsys:N雪崩能效等级(Eas):72 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):131 A
最大漏极电流 (ID):27 A最大漏源导通电阻:0.0032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):65 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD6760A 数据手册

 浏览型号FDD6760A的Datasheet PDF文件第2页浏览型号FDD6760A的Datasheet PDF文件第3页浏览型号FDD6760A的Datasheet PDF文件第4页浏览型号FDD6760A的Datasheet PDF文件第5页浏览型号FDD6760A的Datasheet PDF文件第6页 
January 2009  
FDD6760A  
N-Channel PowerTrench® MOSFET  
25 V, 3.2 mΩ  
Features  
General Description  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using either  
synchronous or conventional switching PWM controllers. It has  
been optimized for low gate charge, low rDS(on) and fast  
switching speed.  
„ Max rDS(on) = 3.2 mat VGS = 10 V, ID = 27 A  
„ Max rDS(on) = 6.0 mat VGS = 4.5 V, ID = 21 A  
„ 100% UIL test  
„ RoHS Compliant  
Applications  
„ Vcore DC-DC for Desktop Computers and Servers  
„ VRM for Intermediate Bus Architecture  
D
D
G
G
S
D-PAK  
(TO-252)  
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
25  
±20  
V
V
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
50  
T
131  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
27  
-Pulsed  
200  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
72  
mJ  
W
TC = 25 °C  
TA = 25 °C  
65  
PD  
Power Dissipation  
(Note 1a)  
3.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +175  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.3  
40  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDD6760A  
FDD6760A  
D-PAK (TO-252)  
2500 units  
1
©2009 Fairchild Semiconductor Corporation  
FDD6760A Rev.C  
www.fairchildsemi.com  

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