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FDD6680AS PDF预览

FDD6680AS

更新时间： 2024-11-10 11:15:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 435K
描述
N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.5mΩ

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中文翻译

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FDD6680AS 技术参数

是否无铅：不含铅生命周期：Active
包装说明：TO-252, 3 PINReach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.77
Is Samacsys：N雪崩能效等级（Eas）：205 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：55 A
最大漏极电流 (ID)：55 A最大漏源导通电阻：0.0105 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：60 W最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD6680AS 数据手册

 浏览型号FDD6680AS的Datasheet PDF文件第2页浏览型号FDD6680AS的Datasheet PDF文件第3页浏览型号FDD6680AS的Datasheet PDF文件第4页浏览型号FDD6680AS的Datasheet PDF文件第5页浏览型号FDD6680AS的Datasheet PDF文件第6页浏览型号FDD6680AS的Datasheet PDF文件第7页 
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中文翻译

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FDD6680AS 替代型号

型号 品牌 替代类型 描述 数据表
FDD6680AS_NL FAIRCHILD

功能相似

 30V N-Channel PowerTrench SyncFET

与FDD6680AS相关器件

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FDD6680AS_08 FAIRCHILD

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 		30V N-Channel PowerTrench㈢ SyncFET⑩
FDD6680AS_NL FAIRCHILD

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 		30V N-Channel PowerTrench SyncFET
FDD6680S FAIRCHILD

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 		30V N-Channel PowerTrench SyncFET⑩
FDD6680S ROCHESTER

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 		55A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FDD6680S_NL FAIRCHILD

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 		Power Field-Effect Transistor, 55A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
FDD6682 FAIRCHILD

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 		30V N-Channel PowerTrench MOSFET
FDD6682_NL FAIRCHILD

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 		Power Field-Effect Transistor, 75A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Me
FDD6685 FAIRCHILD

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 		30V P-Channel PowerTrench MOSFET
FDD6685 ONSEMI

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 		30V，P 沟道，PowerTrench® MOSFET，-40A，20mΩ
FDD6685 UMW

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 		种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C

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