5秒后页面跳转
FDD6685_NL PDF预览

FDD6685_NL

更新时间: 2024-11-18 19:05:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
6页 113K
描述
Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

FDD6685_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:TO-252, 3 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.36
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):52 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD6685_NL 数据手册

 浏览型号FDD6685_NL的Datasheet PDF文件第2页浏览型号FDD6685_NL的Datasheet PDF文件第3页浏览型号FDD6685_NL的Datasheet PDF文件第4页浏览型号FDD6685_NL的Datasheet PDF文件第5页浏览型号FDD6685_NL的Datasheet PDF文件第6页 
February 2004  
FDD6685  
30V P-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications requiring a wide range of gave drive  
voltage ratings (4.5V – 25V).  
·
–40 A, –30 V. RDS(ON) = 20 mW @ VGS = –10 V  
RDS(ON) = 30 mW @ VGS = –4.5 V  
·
·
Fast switching speed  
High performance trench technology for extremely  
low RDS(ON)  
·
·
High power and current handling capability  
Qualified to AEC Q101  
S
D
G
G
S
TO-252  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
30  
Units  
V
VGSS  
Gate-Source Voltage  
V
±25  
ID  
40  
11  
100  
52  
Continuous Drain Current @TC=25°C  
@TA=25°C  
(Note 3)  
(Note 1a)  
A
Pulsed, PW £ 100µs(Note 1b)  
PD  
W
Power Dissipation for Single Operation  
(Note 1)  
(Note 1a)  
(Note 1b)  
3.8  
1.6  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
°C  
55 to +175  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
2.9  
40  
96  
RqJC  
RqJA  
RqJA  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.  
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
FDD6685 Rev D (W)  
Ó2004 Fairchild Semiconductor Corporation  

与FDD6685_NL相关器件

型号 品牌 获取价格 描述 数据表
FDD6688 FAIRCHILD

获取价格

30V N-Channel PowerTrench MOSFET
FDD6688 ONSEMI

获取价格

N 沟道 PowerTrench® MOSFET,30V,84A,5mΩ
FDD6688_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 84A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met
FDD6688S FAIRCHILD

获取价格

30V N-Channel PowerTrench SyncFET
FDD6690 FAIRCHILD

获取价格

N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690A FAIRCHILD

获取价格

30V N-Channel PowerTrench MOSFET
FDD6690A ONSEMI

获取价格

30V N沟道PowerTrench® MOSFET
FDD6690A_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Me
FDD6690S ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA
FDD6692 FAIRCHILD

获取价格

30V N-Channel PowerTrench MOSFET