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FDD6670 PDF预览

FDD6670

更新时间: 2024-09-15 22:19:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 197K
描述
N-Channel, Logic Level, PowerTrench MOSFET

FDD6670 数据手册

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February 2000  
FDD6670A  
N-Channel, Logic Level, PowerTrench MOSFET  
Features  
General Description  
This N-Channel Logic level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize the on-state  
resistance and yet maintain low gate charge for superior  
switching performance.  
66 A, 30 V. RDS(on) = 0.008 @ VGS = 10 V  
RDS(on) = 0.010 @ VGS = 4.5 V.  
Low gate charge (35nC typical).  
Fast switching speed.  
Applications  
High performance trench technology for extremely  
low RDS(on)  
.
DC/DC converter  
Motor drives  
D
D
G
G
S
S
TO-252  
TC=25oC unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
30  
VGSS  
ID  
Gate-Source Voltage  
20  
V
A
±
(Note 1)  
Maximum Drain Current -Continuous  
66  
TA = 25oC  
Maximum Drain Current -Pulsed  
Maximum Power Dissipation  
TC = 25oC  
15  
100  
(Note 1a)  
(Note 1)  
(Note 1a)  
(Note 1b)  
PD  
70  
W
TA = 25oC  
TA = 25oC  
3.2  
1.3  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
(Note 1)  
(Note 1a)  
(Note 1b)  
R
Thermal Resistance, Junction-to-Case  
1.8  
40  
96  
C/W  
C/W  
C/W  
θJC  
°
°
°
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
θJA  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDD6670A  
FDD6670A  
13’’  
16mm  
2500  
2000 Fairchild Semiconductor Corporation  
FDD6670A, Rev. C  

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