是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.87 |
雪崩能效等级(Eas): | 240 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 67 A | 最大漏极电流 (ID): | 67 A |
最大漏源导通电阻: | 0.0085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.6 W |
最大脉冲漏极电流 (IDM): | 100 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn85Pb15) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDD6644S | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 66A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
FDD6670 | FAIRCHILD |
获取价格 |
N-Channel, Logic Level, PowerTrench MOSFET | |
FDD6670A | FAIRCHILD |
获取价格 |
N-Channel, Logic Level, PowerTrench MOSFET | |
FDD6670A | ROCHESTER |
获取价格 |
15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FDD6670A | ONSEMI |
获取价格 |
N 沟道,逻辑电平,PowerTrench® MOSFET,30V,66A,8mΩ | |
FDD6670A | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
FDD6670A_05 | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET | |
FDD6670A_NL | ROCHESTER |
获取价格 |
15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FDD6670A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
FDD6670AL | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET |