Datasheet > FDD6637_10

FDD6637_10

更新时间： 2024-11-18 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	334K
描述
P-Channel PowerTrenchÂ® MOSFET -35V, -21A, 18mÎ©

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FDD6637_10 数据手册

December 2010

FDD6637_F085

P-Channel PowerTrench MOSFET

-35V, -21A, 18mΩ

Applications

Features

Typ r_DS(on)= 9.7mΩ at V_GS= -10V, I_D=- 14A

Typ r_DS(on)= 14.4mΩ at V_GS= -4.5V, I_D=- 11A

Typ Q_g(10)= 45nC at V_GS= -10V

Inverter

Power Supplies

High performance trench technology for extremely low

r_DS(on).

Qualified to AEC Q101

RoHS Compliant

FDD6637_F085 Rev. C

www.fairchildsemi.com

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
FDD6637_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Me
FDD6637-F085	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-35V，-21A，18mΩ
FDD6644	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDD6644S	FAIRCHILD	获取价格	Power Field-Effect Transistor, 66A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me
FDD6670	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A	ROCHESTER	获取价格	15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FDD6670A	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ
FDD6670A	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDD6670A_05	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET