Datasheet > FDD6637

FDD6637

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	415K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-14A;Vgs(th)(V):±25;漏源导通电阻:11.6mΩ@-10V

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FDD6637 数据手册

FDD6637

UMW

-30V P-Channel MOSFET

Applications

Inverter

Power Supplies

Features

DSS

= -30V

=11.6mW(V =-10 V)

DS(ON)

=-4.5 V)

=18mW(V

· High performance trench technology for extremely

low R

DS(ON)

· RoHS Compliant

Absolute Maximum RatingsT =25 ^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–

V_{DS(Avalanche)}

V_GSS

Drain-Source Avalanche Voltage (maximum)

Gate-Source Voltage

(Note 4)

–40

±25

I_D

Continuous Drain Current @T_C=25°C

@T_A=25°C

(Note 3)

(Note 1a)

(Note 3)

–55

–13

Pulsed

–100

P_D

Power Dissipation

@T_C=25°C

@T_A=25°C

(Note 1a)

(Note 1b)

3.1

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.2

R_qJC

R_qJA

Thermal Resistance, Junction-to-Ambient

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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与FDD6637相关器件

型号	品牌	获取价格	描述	数据表
FDD6637_06	FAIRCHILD	获取价格	35V P-Channel PowerTrench MOSFET
FDD6637_10	FAIRCHILD	获取价格	P-Channel PowerTrenchÂ® MOSFET -35V, -21A, 18
FDD6637_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Me
FDD6637-F085	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-35V，-21A，18mΩ
FDD6644	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDD6644S	FAIRCHILD	获取价格	Power Field-Effect Transistor, 66A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me
FDD6670	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A	ROCHESTER	获取价格	15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FDD6670A	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，30V，66A，8mΩ