Datasheet > FDD6630A_11

FDD6630A_11

更新时间： 2024-11-18 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	115K
描述
30V N-Channel PowerTrenchÃ MOSFET

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FDD6630A_11 数据手册

November 2011

FDD6630A

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed.

· 21 A, 30 V

R_DS(ON)= 35 mW @ V_GS= 10 V

R_DS(ON)= 50 mW @ V_GS= 4.5 V

· Low gate charge (5nC typical)

· Fast switching

Applications

· High performance trench technology for extremely

· DC/DC converter

· Motor drives

low R_DS(ON)

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

(Note 3)

(Note 1a)

(Note 1)

100

P_D

Power Dissipation

(Note 1a)

(Note 1b)

3.2

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

R_qJC

R_qJA

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

4.5

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Re el Size

Tape width

Quantity

FDD6630A

13’’

16mm

2500 units

Ó2011 Fairchild Semiconductor Corporation

FDD6630A Rev D1

12 3 4 5

中文翻译

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