Datasheet > FDD6632_04

FDD6632_04

更新时间： 2024-11-09 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	268K
描述
N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз

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FDD6632_04 数据手册

October 2004

FDD6632

N-Channel Logic Level UltraFET Trench Power MOSFET

30V, 9A, 70mΩ

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

•

Fast switching

= 0.058Ω (Typ), V = 10V, I = 9A

GS D

DS(ON)

= 0.090Ω (Typ), V = 4.5V, I = 6A

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

(Typ) = 2.6nC, V = 5V

g(TOT)

(Typ) = 0.8nC

Formerly developmental type 83317

(Typ) = 255pF

ISS

Applications

•

DC/DC converters

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 4.5V)

Continuous (T = 25 C, V = 10V, R = 52 C/W)

θJA

Pulsed

Figure 4

Power dissipation

Derate above 25 C

0.1

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-252

Thermal Resistance Junction to Ambient TO-252

100

C/W

θJC

θJA

C/W

Thermal Resistance Junction to Ambient TO-252, 1in copper pad area

C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

16mm

Quantity

2500 units

FDD6632

TO-252AA

330mm

FDD6632 Rev. B1

12 3 4 5 6 7...11

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