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FDD6612 PDF预览

FDD6612

更新时间: 2024-09-15 22:40:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 123K
描述
N-Channel, Logic Level, PowerTrench⑩ MOSFET

FDD6612 数据手册

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February 2004  
FDD6612A/FDU6612A  
30V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS( ON) , fast switching speed and  
extremely low RDS(ON) in a small package.  
·
30 A, 30 V  
RDS(ON) = 20 mW @ VGS = 10 V  
RDS(ON) = 28 mW @ VGS = 4.5 V  
·
·
·
Low gate charge  
Fast Switching  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
·
·
DC/DC converter  
Motor Drives  
D
D
G
S
I-PAK  
G
(TO-251AA)  
D-PAK  
(TO-252)  
G D S  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
Continuous Drain Current @TC=25°C  
@TA=25°C  
±20  
ID  
(Note 3)  
(Note 1a)  
(Note 1a)  
(Note 1)  
30  
9.5  
Pulsed  
60  
36  
PD  
W
Power Dissipation  
@TC=25°C  
@TA=25°C  
@TA=25°C  
(Note 1a)  
(Note 1b)  
2.8  
1.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
3.9  
45  
96  
RqJC  
RqJA  
RqJA  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13’’  
Tape width  
12mm  
Quantity  
FDD6612A  
FDD6612A  
FDU6612A  
D-PAK (TO-252)  
I-PAK (TO-251)  
2500 units  
75  
FDU6612A  
Tube  
N/A  
FDD6612A/FDU6612A Rev E(W)  
Ó2004 Fairchild Semiconductor Corporation  

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