Datasheet > FDD6630A

FDD6630A

更新时间： 2024-11-07 11:14:35

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
6页	223K
描述
N 沟道，PowerTrench® MOSFET，30V，21A，35mΩ

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FDD6630A 数据手册

ON Semiconductor

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To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与FDD6630A相关器件

型号	品牌	获取价格	描述	数据表
FDD6630A_11	FAIRCHILD	获取价格	30V N-Channel PowerTrenchÃ MOSFET
FDD6632	FAIRCHILD	获取价格	N-Channel Logic Level UltraFET Trench Power M
FDD6632_04	FAIRCHILD	获取价格	N-Channel Logic Level UltraFET㈢ Trench Power
FDD6635	FAIRCHILD	获取价格	35V N-Channel PowerTrench MOSFET
FDD6635	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，35V，59A，10mΩ
FDD6637	FAIRCHILD	获取价格	35V P-Channel PowerTrench MOSFET
FDD6637	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，35V，-55A，11.6mΩ
FDD6637	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
FDD6637_06	FAIRCHILD	获取价格	35V P-Channel PowerTrench MOSFET
FDD6637_10	FAIRCHILD	获取价格	P-Channel PowerTrenchÂ® MOSFET -35V, -21A, 18

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