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BFP193TW PDF预览

BFP193TW

更新时间: 2024-11-10 22:48:23
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
6页 100K
描述
Silicon NPN Planar RF Transistor

BFP193TW 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.06Is Samacsys:N
最大集电极电流 (IC):0.08 A配置:Single
最小直流电流增益 (hFE):50最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.42 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BFP193TW 数据手册

 浏览型号BFP193TW的Datasheet PDF文件第2页浏览型号BFP193TW的Datasheet PDF文件第3页浏览型号BFP193TW的Datasheet PDF文件第4页浏览型号BFP193TW的Datasheet PDF文件第5页浏览型号BFP193TW的Datasheet PDF文件第6页 
BFP193T/BFP193TW/BFP193TRW  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
Forlownoiseandhighgainapplicationssuchaspower  
amplifiers up to 2 GHz and for linear broadband ampli-  
fiers.  
Features  
Low noise figure  
High transition frequency f = 8 GHz  
T
Excellent large signal behaviour  
1
2
3
1
2
3
13 654  
13 566  
13 653  
13 566  
4
4
BFP193TW Marking: W19  
Plastic case (SOT 343)  
BFP193TRW Marking: W91  
Plastic case (SOT 343R)  
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter  
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter  
2
1
13 579  
94 9279  
3
4
BFP193T Marking: 193  
Plastic case (SOT 143)  
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter  
Document Number 85015  
Rev. 1, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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