生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.06 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.08 A | 配置: | Single |
最小直流电流增益 (hFE): | 50 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.42 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFP193W | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broad | |
BFP193W_07 | INFINEON |
获取价格 |
NPN Silicon RF Transistor | |
BFP194 | INFINEON |
获取价格 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecomm | |
BFP194E6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP, SOT-143, 4 | |
BFP196 | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna a | |
BFP196_07 | INFINEON |
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NPN Silicon RF Transistor | |
BFP196E6327 | ROCHESTER |
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L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
BFP196E6327BTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, | |
BFP196E6327HTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, | |
BFP196-E6433 | INFINEON |
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Transistor |