Datasheet > BFP193W_07

BFP193W_07

更新时间： 2024-02-15 14:12:58

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	82K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFP193W_07 数据手册

BFP193W

NPN Silicon RF Transistor*

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• f = 8 GHz, F = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

SOT343

BFP193W

RCs

1 = E 2 = C 3 = E 4 = B -

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

580

°C

Base current

Total power dissipation

tot

T ≤ 66°C

150

Junction temperature

Ambient temperature

Storage temperature

-55 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 145

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-20

12 3 4 5 6 7

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