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BFP196 PDF预览

BFP196

更新时间: 2024-01-15 08:10:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管电信光电二极管
页数 文件大小 规格书
7页 65K
描述
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.62最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:S BANDJESD-30 代码:R-PDSO-G4
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):7500 MHzBase Number Matches:1

BFP196 数据手册

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BFP 196  
NPN Silicon RF Transistor  
• For low noise, low distortion broadband  
amplifiers in antenna and telecommunications  
systems up to 1.5GHz at collector currents from  
20mA to 80mA  
• Power amplifier for DECT and PCN systems  
f = 7.5GHz  
T
F = 1.5 dB at 900MHz  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFP 196  
RIs  
Q62702-F1320  
1 = C 2 = E 3 = B 4 = E SOT-143  
Maximum Ratings  
Parameter  
Symbol  
Values  
12  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CEO  
V
CES  
V
CBO  
V
EBO  
V
20  
20  
2
I
I
100  
12  
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T
77 °C  
700  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
thJS  
105  
K/W  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-13-1996  

BFP196 替代型号

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TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-143