Datasheet > BFP196TR

BFP196TR

更新时间： 2024-02-25 08:18:50

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	79K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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BFP196TR 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.06
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	50
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	6000 MHz
Base Number Matches：	1

BFP196TR 数据手册

BFP196T/BFP196TR/BFP196TW

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

Features

For low noise, low distortion broadband amplifiers in

telecommunications and antenna systems and power

amplifiersfor DECT and PCN systems at collector

currents between 20 mA and 80 mA up to 2 GHz

D Low noise figure

D High transition frequency f = 7.5 GHz

D Excellent large signal behaviour

13628

13629

BFP196TMarking: 196

Plastic case (SOT 143)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

BFP193TRMarking: R96

Plastic case (SOT 143R)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

13632

BFP193TWMarking: W96

Plastic case (SOT 343)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

Absolute Maximum Ratings

amb

= 25°C, unless otherwise specified

Parameter

Test Conditions

Type

Symbol

Value

100

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

CBO

CEO

EBO

°C

ꢀ 60 °C

500

150

–65 to +150

amb

tot

stg

Document Number 85091

Rev. 1, 12–Nov–01

www.vishay.com

1 (5)

12 3 4 5

中文翻译

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