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BFP405E6327 PDF预览

BFP405E6327

更新时间: 2024-01-26 20:58:56
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
9页 553K
描述
RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, X Band, Silicon, NPN

BFP405E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.66
其他特性:HIGH RELIABILITY外壳连接:EMITTER
最大集电极电流 (IC):0.012 A基于收集器的最大容量:0.08 pF
集电极-发射极最大电压:4.5 V配置:SINGLE WITH BUILT-IN DIODE
最高频带:X BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):25000 MHzBase Number Matches:1

BFP405E6327 数据手册

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BFP405  
Low Noise Silicon Bipolar RF Transistor  
For low current applications  
For oscillators up to 12 GHz  
3
2
1
4
Minimum noise figure NF  
= 1.25 dB at 1.8 GHz  
min  
Outstanding G = 23 dB at 1.8 GHz  
ms  
Pb-free (RoHS compliant) and halogen-free package  
with visible leads  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP405  
Marking  
ALs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
SOT343  
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
V
CEO  
T = 25 °C  
4.5  
4.1  
15  
15  
1.5  
25  
3
A
T = -55 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Base current  
Total power dissipation  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
I
B
1)  
75  
P
tot  
T 110 °C  
Junction temperature  
Ambient temperature  
S
150  
-65 ... 150  
-65 ... 150  
T
J
T
A
Storage temperature  
T
Stg  
1
T is measured on the emitter lead at the soldering point to the pcb  
S
1
2013-09-19  

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