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BFP405

更新时间: 2024-11-10 22:39:35
品牌 Logo 应用领域
英飞凌 - INFINEON 振荡器晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 52K
描述
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

BFP405 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.64
其他特性:HIGH RELIABILITY外壳连接:EMITTER
最大集电极电流 (IC):0.012 A基于收集器的最大容量:0.1 pF
集电极-发射极最大电压:4.5 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):50最高频带:X BAND
JESD-30 代码:R-PDSO-G4湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.055 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):25000 MHz
Base Number Matches:1

BFP405 数据手册

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SIEGET 25  
BFP 405  
NPN Silicon RF Transistor  
3
For low current applications  
For oscillators up to 12 GHz  
Noise figure F = 1.15 dB at 1.8 GHz  
4
outstanding G = 22 dB at 1.8 GHz  
ms  
Transition frequency f = 25 GHz  
2
T
Gold metalization for high reliability  
SIEGET 25 - Line  
VPS05605  
1
Siemens Grounded Emitter Transistor  
25 GHz f - Line  
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type Marking Ordering Code Pin Configuration  
Package  
BFP 405 ALs  
Q62702-F1592  
1 = B  
2 = E  
3 = C  
4 = E  
SOT-343  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
4.5  
15  
1.5  
12  
1
V
V
V
V
CEO  
CBO  
EBO  
mA  
I
I
C
Base current  
B
55  
150  
mW  
Total power dissipation, T 120 °C  
P
T
T
T
S
tot  
j
Junction temperature  
Ambient temperature  
Storage temperature  
°C  
-65 ...+150  
-65 ...+150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
K/W  
R
530  
thJS  
1) TS is measured on the collector lead at the soldering point to the pcb  
Semiconductor Group  
1
Sep-09-1998  
1998-11-01  
Semiconductor Group  
1

BFP405 替代型号

型号 品牌 替代类型 描述 数据表
BFP193W INFINEON

完全替代

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broad
MMBTH10-4LT1G ONSEMI

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