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BFP280T PDF预览

BFP280T

更新时间: 2024-11-10 22:39:35
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
6页 95K
描述
Silicon NPN Planar RF Transistor

BFP280T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.29
最大集电极电流 (IC):0.01 A配置:Single
最小直流电流增益 (hFE):30最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.08 W
子类别:Other Transistors表面贴装:YES

BFP280T 数据手册

 浏览型号BFP280T的Datasheet PDF文件第2页浏览型号BFP280T的Datasheet PDF文件第3页浏览型号BFP280T的Datasheet PDF文件第4页浏览型号BFP280T的Datasheet PDF文件第5页浏览型号BFP280T的Datasheet PDF文件第6页 
BFP280T/BFP280TW/BFP280TRW  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
For low noise and high gain broadband amplifiers at  
collector currents from 0.2 mA to 8 mA.  
Features  
1
2
3
1
2
3
13 654  
13 566  
13 653  
13 566  
4
4
BFP280TW Marking: W28  
Plastic case (SOT 343)  
BFP280TRW Marking: WSE  
Plastic case (SOT 343R)  
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter  
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter  
2
1
13 579  
94 9279  
3
4
BFP280T Marking: 28  
Plastic case (SOT 143)  
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter  
Document Number 85016  
Rev. 2, 20–Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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