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BFP360W PDF预览

BFP360W

更新时间: 2024-01-22 05:39:42
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
4页 103K
描述
NPN Silicon RF Transistor

BFP360W 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOT-343, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.5 pF集电极-发射极最大电压:6 V
配置:SINGLE最小直流电流增益 (hFE):60
最高频带:S BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.21 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):14000 MHzBase Number Matches:1

BFP360W 数据手册

 浏览型号BFP360W的Datasheet PDF文件第2页浏览型号BFP360W的Datasheet PDF文件第3页浏览型号BFP360W的Datasheet PDF文件第4页 
BFP360W  
NPN Silicon RF Transistor  
3
Preliminary data  
Low voltage/ low current operation  
For low noise amplifiers  
4
For Oscillators up to 3.5 GHz and Pout > 10 dBm  
Low noise figure: 1.0 dB at 1.8 GHz  
2
VPS05605  
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
BFP360W  
Marking  
FBs  
Pin Configuration  
1 = E 2 = C 3 = E 4 = B -  
Package  
SOT343  
-
Maximum Ratings  
Parameter  
Symbol  
Value  
6
15  
15  
2
35  
4
210  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
Base current  
Total power dissipation  
I
B
1)  
P
tot  
T
95°C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
T
A
T
stg  
Thermal Resistance  
Parameter  
Symbol  
R
Value  
260  
Unit  
K/W  
2)  
Junction - soldering point  
thJS  
T is measured on the collector lead at the soldering point to the pcb  
1
S
2
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
Jun-16-2003  
1

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