5秒后页面跳转
BFP420H6327 PDF预览

BFP420H6327

更新时间: 2024-10-01 12:26:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
9页 542K
描述
For high gain low noise amplifiers

BFP420H6327 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
风险等级:1.71其他特性:HIGH RELIABILITY, LOW NOISE
最大集电极电流 (IC):0.035 A基于收集器的最大容量:0.3 pF
集电极-发射极最大电压:4.5 V配置:SINGLE
最高频带:X BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN参考标准:AEC-Q101
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):25000 MHz
Base Number Matches:1

BFP420H6327 数据手册

 浏览型号BFP420H6327的Datasheet PDF文件第2页浏览型号BFP420H6327的Datasheet PDF文件第3页浏览型号BFP420H6327的Datasheet PDF文件第4页浏览型号BFP420H6327的Datasheet PDF文件第5页浏览型号BFP420H6327的Datasheet PDF文件第6页浏览型号BFP420H6327的Datasheet PDF文件第7页 
BFP420  
NPN Silicon RF Transistor  
For high gain low noise amplifiers  
For oscillators up to 10 GHz  
Noise figure F = 1.1 dB at 1.8 GHz  
3
2
1
4
outstanding G = 21 dB at 1.8 GHz  
ms  
Transition frequency f = 25 GHz  
T
Gold metallization for high reliability  
SIEGET 25 GHz fT - Line  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
1)  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP420  
Marking  
AMs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
SOT343  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
T > 0 °C  
V
CEO  
4.5  
4.1  
15  
15  
1.5  
35  
A
T 0 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
I
C
3
160  
Base current  
Total power dissipation  
B
2)  
P
tot  
T 107 °C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
A
stg  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
2009-12-02  
1

与BFP420H6327相关器件

型号 品牌 获取价格 描述 数据表
BFP420H6433XTMA1 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COM
BFP420H6740 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COM
BFP420H6801 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COM
BFP450 INFINEON

获取价格

NPN Silicon RF Transistor (For medium power amplifiers)
BFP450_10 INFINEON

获取价格

High Linearity Low Noise Si NPN RF Transistor
BFP450-E6327 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, 1.25 MM X
BFP450-E6433 INFINEON

获取价格

Transistor
BFP450H6327 INFINEON

获取价格

High Linearity Silicon Bipolar RF Transistor
BFP450H6327XTSA1 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, X Band, Silicon Germanium Carbo
BFP450H6433 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, X Band, Silicon Germanium Carbo