Datasheet > BFP410

BFP410

更新时间： 2024-01-02 03:36:17

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	547K
描述
NPN Silicon RF Transistor

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BFP410 数据手册

BFP410

NPN Silicon RF Transistor

• Low current device suitable e.g. for handhelds

• For high frequency oscillators e.g. DRO for LNB

• For ISM band applications like

Automatic Meter Reading, Sensors etc.

• Transit frequency f = 25 GHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP410

Marking

AKs

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

CEO

T = 25 °C

4.5

4.1

1.5

T = -55 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

CES

CBO

EBO

°C

150

tot

T ≤ 100 °C

150

-55 ... 150

Junction temperature

Ambient temperature

Storage temperature

Stg

¹T is measured on the emitter lead at the soldering point to the pcb

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

335

Unit

K/W

thJS

2010-04-09

12 3 4 5 6 7 8

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