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BFP450

更新时间: 2024-09-30 22:39:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管功率放大器光电二极管
页数 文件大小 规格书
8页 52K
描述
NPN Silicon RF Transistor (For medium power amplifiers)

BFP450 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.28Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:EMITTER
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:4.5 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:L BAND
JESD-30 代码:R-PDSO-G4湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.45 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):24000 MHz
Base Number Matches:1

BFP450 数据手册

 浏览型号BFP450的Datasheet PDF文件第2页浏览型号BFP450的Datasheet PDF文件第3页浏览型号BFP450的Datasheet PDF文件第4页浏览型号BFP450的Datasheet PDF文件第5页浏览型号BFP450的Datasheet PDF文件第6页浏览型号BFP450的Datasheet PDF文件第7页 
SIEGET 25  
BFP 450  
NPN Silicon RF Transistor  
3
For medium power amplifiers  
4
Compression point P  
= +19 dBm at 1.8 GHz  
-1dB  
maximum available gain G = 14 dB at 1.8 GHz  
ma  
Noise figure F = 1.25 dB at 1.8 GHz  
Transition frequency f = 24 GHz  
2
T
Gold metalization for high reliability  
SIEGET 25 - Line  
VPS05605  
1
Siemens Grounded Emitter Transistor  
25 GHz f - Line  
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
ANs Q62702-F1590  
Pin Configuration  
Package  
BFP 450  
1 = B  
2 = E  
3 = C  
4 = E  
SOT-343  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
4.5  
15  
V
V
V
V
CEO  
CBO  
EBO  
1.5  
100  
10  
mA  
I
C
Base current  
I
B
450  
150  
mW  
Total power dissipation, T 96 °C  
P
tot  
S
Junction temperature  
Ambient temperature  
Storage temperature  
°C  
T
j
-65 ...+150  
-65 ...+150  
T
T
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
K/W  
R
130  
thJS  
1) TS is measured on the collector lead at the soldering point to the pcb  
Semiconductor Group  
1
Sep-09-1998  
1998-11-01  
Semiconductor Group  
1

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