Datasheet > BFP420E6327BTSA1

BFP420E6327BTSA1

更新时间： 2024-01-30 05:45:41

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	561K
描述
RF Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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BFP420E6327BTSA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.62
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BFP420E6327BTSA1 数据手册

BFP420

Low Noise Silicon Bipolar RF Transistor

• For high gain and low noise amplifiers

• Minimum noise figure NF

= 1.1 dB at 1.8 GHz

min

Outstanding G = 21 dB at 1.8 GHz

• For oscillators up to 10 GHz

• Transition frequency f = 25 GHz

• Pb-free (RoHS compliant) and halogen-free package

with visible leads

• Qualification report according to AEC-Q101 available

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP420

Marking

AMs

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

CEO

T = 25 °C

4.5

4.1

1.5

T = -55 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

210

Base current

Total power dissipation

tot

T ≤ 98 °C

150

Junction temperature

Storage temperature

-55 ... 150

Stg

T is measured on the emitter lead at the soldering point to the pcb

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

250

Unit

K/W

thJS

2013-09-19

12 3 4 5 6 7...9

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