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BFP405F PDF预览

BFP405F

更新时间: 2024-01-09 23:21:45
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 60K
描述
NPN Silicon RF Transistor

BFP405F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
其他特性:HIGH RELIABILITY最大集电极电流 (IC):0.012 A
基于收集器的最大容量:0.1 pF集电极-发射极最大电压:4.5 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):60
最高频带:L BANDJESD-30 代码:R-PDSO-F4
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.055 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):25000 MHzBase Number Matches:1

BFP405F 数据手册

 浏览型号BFP405F的Datasheet PDF文件第2页浏览型号BFP405F的Datasheet PDF文件第3页浏览型号BFP405F的Datasheet PDF文件第4页 
BFP405F  
SIEGET 25  
NPN Silicon RF Transistor  
Preliminary data  
For low current applications  
Smallest Package 1.4 x 0.8 x 0.59mm  
Noise figure F = 1.25 dB at 1.8 GHz  
XYs  
3
4
2
1
outstanding G = 23 dB at 1.8 GHz  
ms  
Transition frequency f = 25 GHz  
T
TSFP-4  
Gold metallization for high reliability  
t
o
p
v
i
e
w
SIEGET 25 GHz f - Line  
T
4
3
A
L
s
1
2
d
i
r
e
c
t
i
o
n
o
f
u
n
r
e
e
l
i
n
g
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
2=E 3=C 4=E  
Package  
BFP405F  
ALs  
1=B  
TSFP-4  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
4.5  
15  
1.5  
12  
1
V
CEO  
CBO  
EBO  
I
mA  
mW  
°C  
C
Base current  
I
B
P
55  
Total power dissipation  
tot  
1)  
T
122°C  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
150  
j
T
-65 ... 150  
-65 ... 150  
A
T
stg  
Thermal Resistance  
2)  
R
K/W  
Junction - soldering point  
500  
thJS  
1
T is measured on the emitter lead at the soldering point to the pcb  
S
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Dec-07-2001  

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