Datasheet > BFP420F_07

BFP420F_07

更新时间： 2024-01-31 16:31:29

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	63K
描述
NPN Silicon RF Transistor

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数据手册

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BFP420F_07 数据手册

BFP420F

NPN Silicon RF Transistor*

• For high gain low noise amplifiers

• Smallest Package 1.4 x 0.8 x 0.59 mm

• Noise figure F = 1.1 dB at 1.8 GHz

outstanding G = 20 dB at 1.8 GHz

• Transition frequency f = 25 GHz

• Gold metallization for high reliability

• SIEGET  25 GHz fT - Line

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

BFP420F

AMs

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0 °C

CEO

4.5

4.1

T ≤ 0 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

1.5

°C

Base current

160

Total power dissipation

tot

T ≤ 111 °C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

2007-04-20

12 3 4 5 6 7

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