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BFP405-E6433 PDF预览

BFP405-E6433

更新时间: 2024-01-04 07:17:01
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 534K
描述
Transistor

BFP405-E6433 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84最大集电极电流 (IC):0.012 A
配置:Single最小直流电流增益 (hFE):50
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.055 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):18000 MHzBase Number Matches:1

BFP405-E6433 数据手册

 浏览型号BFP405-E6433的Datasheet PDF文件第2页浏览型号BFP405-E6433的Datasheet PDF文件第3页浏览型号BFP405-E6433的Datasheet PDF文件第4页浏览型号BFP405-E6433的Datasheet PDF文件第5页浏览型号BFP405-E6433的Datasheet PDF文件第6页浏览型号BFP405-E6433的Datasheet PDF文件第7页 
BFP405  
NPN Silicon RF Transistor  
For low current applications  
For oscillators up to 12 GHz  
Noise figure F = 1.25 dB at 1.8 GHz  
3
2
1
4
outstanding G = 23 dB at 1.8 GHz  
ms  
SIEGET 25 GHz fT - Line  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP405  
Marking  
ALs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
SOT343  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
T > 0 °C  
V
CEO  
4.5  
4.1  
15  
15  
1.5  
25  
1
A
T 0 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
I
C
Base current  
Total power dissipation  
B
1)  
75  
P
tot  
T 108 °C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
A
stg  
1T is measured on the collector lead at the soldering point to the pcb  
S
2009-11-06  
1

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