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BFP405F-E6327 PDF预览

BFP405F-E6327

更新时间: 2024-02-13 05:12:12
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 72K
描述
Transistor

BFP405F-E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82最大集电极电流 (IC):0.012 A
配置:Single最小直流电流增益 (hFE):50
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.055 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):18000 MHzBase Number Matches:1

BFP405F-E6327 数据手册

 浏览型号BFP405F-E6327的Datasheet PDF文件第2页浏览型号BFP405F-E6327的Datasheet PDF文件第3页浏览型号BFP405F-E6327的Datasheet PDF文件第4页浏览型号BFP405F-E6327的Datasheet PDF文件第5页浏览型号BFP405F-E6327的Datasheet PDF文件第6页浏览型号BFP405F-E6327的Datasheet PDF文件第7页 
BFP405F  
NPN Silicon RF Transistor*  
For low current applications  
3
2
1
Smallest Package 1.4 x 0.8 x 0.59 mm  
Noise figure F = 1.25 dB at 1.8 GHz  
4
outstanding G = 23 dB at 1.8 GHz  
ms  
Transition frequency f = 25 GHz  
T
Gold metallization for high reliability  
SIEGET 25 GHz fT - Line  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
TSFP-4  
BFP405F  
ALs  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
T > 0 °C  
V
CEO  
4.5  
4.1  
15  
15  
1.5  
12  
1
A
T 0 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
I
C
Base current  
B
2)  
55  
Total power dissipation  
P
tot  
T 122 °C  
S
150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
-65 ... 150  
-65 ... 150  
A
stg  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
2007-04-20  
1

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