生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.06 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 50 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.5 W |
子类别: | Other Transistors | 表面贴装: | YES |
标称过渡频率 (fT): | 6000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFP196W | INFINEON |
获取价格 |
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna an |
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BFP196W_07 | INFINEON |
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NPN Silicon RF Transistor |
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BFP196WE6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN |
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BFP196WE6327 | ROCHESTER |
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L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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BFP196WE6327HTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN |
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BFP196WH6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMP |
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BFP196WN | INFINEON |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, S Band, Silicon, NPN, |
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BFP22 | INFINEON |
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NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage |
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BFP23 | INFINEON |
获取价格 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
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BFP25 | INFINEON |
获取价格 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage |
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