5秒后页面跳转
BFP26 PDF预览

BFP26

更新时间: 2024-01-25 09:19:18
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 198K
描述
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

BFP26 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.92Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BFP26 数据手册

 浏览型号BFP26的Datasheet PDF文件第2页浏览型号BFP26的Datasheet PDF文件第3页浏览型号BFP26的Datasheet PDF文件第4页 
PNP Silicon Transistors  
with High Reverse Voltage  
BFP 23  
BFP 26  
High breakdown voltage  
Low collector-emitter saturation voltage  
Low capacitance  
Complementary types: BFP 22, BFP 25 (NPN)  
1
2
3
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BFP 23  
BFP 26  
Q62702-F622  
Q62702-F722  
E
B
C
TO-92  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
BFP 23  
200  
BFP 26  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
300  
V
V
200  
300  
V
6
I
I
I
I
C
200  
500  
100  
200  
625  
150  
mA  
Peak collector current  
Base current  
CM  
B
Peak base current  
BM  
Total power dissipation, T  
C
=66 ˚C  
Ptot  
mW  
˚C  
Junction temperature  
Tj  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient  
Junction - case2)  
R
th JA  
th JC  
200  
135  
K/W  
R
1)  
For detailed information see chapter Package Outlines.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
2)  

与BFP26相关器件

型号 品牌 获取价格 描述 数据表
BFP280 INFINEON

获取价格

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication sys
BFP280E6327 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Sili
BFP280T VISHAY

获取价格

Silicon NPN Planar RF Transistor
BFP280T-GS08 TEMIC

获取价格

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,
BFP280T-GS18 TEMIC

获取价格

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,
BFP280TRW VISHAY

获取价格

Silicon NPN Planar RF Transistor
BFP280TRW TEMIC

获取价格

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Sili
BFP280TW VISHAY

获取价格

Silicon NPN Planar RF Transistor
BFP280TW TEMIC

获取价格

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Sili
BFP280W INFINEON

获取价格

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication sys