是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1.4 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 7500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFP196WE6327HTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN | |
BFP196WH6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMP | |
BFP196WN | INFINEON |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, S Band, Silicon, NPN, | |
BFP22 | INFINEON |
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NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage | |
BFP23 | INFINEON |
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PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) | |
BFP25 | INFINEON |
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NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage | |
BFP26 | INFINEON |
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PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) | |
BFP280 | INFINEON |
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NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication sys | |
BFP280E6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, Ultra High Frequency Band, Sili | |
BFP280T | VISHAY |
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Silicon NPN Planar RF Transistor |