BFP23

更新时间： 2024-01-28 04:21:29

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	198K
描述
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

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中文翻译

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数据手册

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BFP23 数据手册

PNP Silicon Transistors

with High Reverse Voltage

BFP 23

BFP 26

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary types: BFP 22, BFP 25 (NPN)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFP 23

BFP 26

–

Q62702-F622

Q62702-F722

TO-92

Maximum Ratings

Parameter

Symbol

Values

Unit

BFP 23

200

BFP 26

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

300

200

300

200

500

100

200

625

150

Peak collector current

Base current

Peak base current

Total power dissipation, T

=66 ˚C

Ptot

˚C

Junction temperature

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient

Junction - case²⁾

th JA

th JC

≤ 200

≤ 135

K/W

For detailed information see chapter Package Outlines.

Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

12 3 4

中文翻译

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