Datasheet > BFP196E6327HTSA1

BFP196E6327HTSA1

更新时间： 2024-02-25 22:09:49

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	77K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,

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BFP196E6327HTSA1 数据手册

BFP196

NPN Silicon RF Transistor*

• For low noise, low distortion broadband

amplifiers in antenna and telecommunications

systems up to 1.5 GHz at collector currents from

20 mA to 80 mA

• Power amplifier for DECT and PCN systems

• f = 7.5 GHz, F = 1.3 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

SOT143

BFP196

RIs

1 = C 2 = E 3 = B 4 = E -

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

150

°C

Base current

700

Total power dissipation

tot

T ≤ 77°C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 105

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-20

12 3 4 5 6 7

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