Datasheet > BFP196R-E6327

BFP196R-E6327

更新时间： 2024-11-11 20:50:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	81K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BFP196R-E6327 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	0.15 A	配置：	Single
最小直流电流增益 (hFE)：	70	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.7 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	5000 MHz	Base Number Matches：	1

BFP196R-E6327 数据手册

BFP196R

NPN Silicon RF Transistor*

• For low noise, low distortion broadband

amplifiers in antenna and telecommunications

systems up to 1.5 GHz at collector currents from

20 mA to 80 mA

• Power amplifier for DECT and PCN systems

• f = 7.5 GHz, F = 1.3 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

SOT143R

BFP196R

RIs

1 = E 2 = C 3 = E 4 = B -

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

150

°C

Base current

700

Total power dissipation

tot

T ≤ 77°C

150

Junction temperature

Ambient temperature

Storage temperature

-55 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 105

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-20

12 3 4 5 6 7

中文翻译

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