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BFP196RE6501HTSA1 PDF预览

BFP196RE6501HTSA1

更新时间: 2024-11-12 04:07:27
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
7页 81K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4

BFP196RE6501HTSA1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.63其他特性:LOW NOISE
最大集电极电流 (IC):0.15 A基于收集器的最大容量:1.3 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7500 MHz
Base Number Matches:1

BFP196RE6501HTSA1 数据手册

 浏览型号BFP196RE6501HTSA1的Datasheet PDF文件第2页浏览型号BFP196RE6501HTSA1的Datasheet PDF文件第3页浏览型号BFP196RE6501HTSA1的Datasheet PDF文件第4页浏览型号BFP196RE6501HTSA1的Datasheet PDF文件第5页浏览型号BFP196RE6501HTSA1的Datasheet PDF文件第6页浏览型号BFP196RE6501HTSA1的Datasheet PDF文件第7页 
BFP196R  
NPN Silicon RF Transistor*  
For low noise, low distortion broadband  
amplifiers in antenna and telecommunications  
systems up to 1.5 GHz at collector currents from  
20 mA to 80 mA  
3
2
4
1
Power amplifier for DECT and PCN systems  
f = 7.5 GHz, F = 1.3 dB at 900 MHz  
T
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
SOT143R  
BFP196R  
RIs  
1 = E 2 = C 3 = E 4 = B -  
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
12  
20  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
20  
2
150  
15  
mA  
mW  
°C  
I
I
C
Base current  
B
2)  
700  
Total power dissipation  
P
tot  
T 77°C  
S
150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
-55 ... 150  
-55 ... 150  
A
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
3)  
K/W  
Junction - soldering point  
R
105  
thJS  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
3For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-20  
1

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