生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.63 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.15 A | 基于收集器的最大容量: | 1.3 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 7500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFP196T | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-143 | |
BFP196TR | VISHAY |
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Transistor, | |
BFP196TW | VISHAY |
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Transistor, | |
BFP196W | INFINEON |
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NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna an | |
BFP196W_07 | INFINEON |
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NPN Silicon RF Transistor | |
BFP196WE6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN | |
BFP196WE6327 | ROCHESTER |
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L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
BFP196WE6327HTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN | |
BFP196WH6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMP | |
BFP196WN | INFINEON |
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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, S Band, Silicon, NPN, |