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AUIRF7304QTR

更新时间： 2024-11-09 12:30:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
12页	222K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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数据手册
替代型号

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AUIRF7304QTR 数据手册

PD - 97653A

AUTOMOTIVE GRADE

AUIRF7304Q

HEXFET^®Power MOSFET

Features

l AdvancedPlanarTechnology

l LowOn-Resistance

l Dual P Channel MOSFET

l Dynamic dV/dT Rating

l Logic Level

l 150°COperatingTemperature

l Fast Switching

l Lead-Free,RoHSCompliant

l AutomotiveQualified*

V_(BR)DSS

_DS(on)max.

I_D

-20V

0.090Ω

-4.3A

Top View

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit com-

bined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are

well known for, provides the designer with an ex-

tremely efficient and reliable device for use in Auto-

motive and a wide variety of other applications.

SO-8

AUIRF7304Q

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air

conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Max.

-4.7

-4.3

-3.4

-17

Units

@ T_A= 25°C

@ T_A= 70°C

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

Power Dissipation

@T_A= 25°C

2.0

Linear Derating Factor

Gate-to-Source Voltage

0.016

± 12

W/°C

V_GS

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

-55 to + 150

V/ns

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

Max.

62.5

Units

°C/W

R_θJA

Junction-to-Ambient

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/23/11

12 3 4 5 6 7...12

中文翻译

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AUIRF7304QTR 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7304Q	INFINEON	类似代替	Advanced Planar Technology Low On-Resistance
IRF7304QPBF	INFINEON	功能相似	HEXFET Power MOSFET

与AUIRF7304QTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRF7309Q	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7309QTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7313Q	INFINEON	获取价格	Advanced Planar Technology Dual N Channel MOSFET
AUIRF7313QTR	INFINEON	获取价格	Advanced Planar Technology Dual N Channel MOSFET
AUIRF7316Q	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7316QTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7319Q	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRF7319QTR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRF7341Q	INFINEON	获取价格	Advanced Planar Technology Ultra Low On-Resistance
AUIRF7341QTR	INFINEON	获取价格	Advanced Planar Technology Ultra Low On-Resistance

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