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AUIRF7309QTR

更新时间: 2024-11-25 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 293K
描述
Advanced Planar Technology Low On-Resistance

AUIRF7309QTR 数据手册

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PD - 97655A  
AUTOMOTIVE GRADE  
AUIRF7309Q  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l Dual N and P Channel MOSFET  
l Dynamic dV/dT Rating  
l 150°COperatingTemperature  
l Fast Switching  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
HEXFET® Power MOSFET  
N-CHANNEL MOSFET  
N-CH P-CH  
1
8
D1  
D1  
S1  
2
7
G1  
V(BR)DSS  
RDS(on) max.  
ID  
30V  
0.05  
-30V  
0.10  
3
4
6
5
S2  
D2  
D2  
Ω
Ω
G2  
P-CHANNEL MOSFET  
4.7A -3.5A  
Top View  
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and  
a wide variety of other applications.  
SO-8  
AUIRF7309Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure  
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings  
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
N-Channel  
P-Channel  
10 Sec. Pulsed Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
4.7  
-3.5  
I @ TA = 25°C  
D
4
-3.0  
-2.4  
-12  
I @ TA = 25°C  
D
A
3.2  
16  
I @ TA = 70°C  
D
I
DM  
1.4  
W
W/°C  
V
P @TA = 25°C  
Power Dissipation  
D
0.011  
± 20  
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
dv/dt  
6.9  
-6.0  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction and  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Junction-to-Ambient (PCB Mount, steady state)  
90  
°C/W  
–––  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/23/11  

AUIRF7309QTR 替代型号

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AUIRF7309Q INFINEON

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