AUIRF7379Q

更新时间： 2024-09-17 12:53:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
13页	238K
描述
Advanced Planar Technology Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

AUIRF7379Q 数据手册

PD - 96366B

AUTOMOTIVE MOSFET

AUIRF7379Q

HEXFET^®Power MOSFET

Features

AdvancedPlanarTechnology

LowOn-Resistance

Dual N and P Channel MOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Automotive [Q101] Qualified

Lead-Free,RoHSCompliant

N-Ch

30V

P-Ch

-30V

N-CHANNEL MOSFET

V_(BR)DSS

R_DS(on)typ.

0.038 0.070

max.

0.045Ω 0.090Ω

5.8A -4.3A

P-CHANNEL MOSFET

Top View

Description

I_D

Specifically designed for Automotive applications, these

HEXFET^®Power MOSFET's in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

AutomotivequalifiedHEXFETPowerMOSFET's area150°C

junction operating temperature, fast switching speed and

improvedrepetitiveavalancherating.Thesebenefitscombine

to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other

applications.

SO-8

The efficient SO-8 package provides enhanced thermal

characteristicsanddualMOSFETdiecapabilitymakingitideal

in a variety of power applications. This dual, surface mount

SO-8candramaticallyreduceboardspaceandisalsoavailable

in Tape & Reel.

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Units

Parameter

N-Channel

P-Channel

Drain-Source Voltage

5.8

4.6

-30

-4.3

-3.4

-34

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

2.5

Power Dissipation

@T_A= 25°C

0.02

± 20

Linear Derating Factor

Gate-to-Source Voltage

dv/dt

5.0

-5.0

V/ns

Peak Diode Recovery dv/dt

Operating Junction and

-55 to + 150

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

08/24/11

12 3 4 5 6 7...13

中文翻译

下载PDF

AUIRF7379Q 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7379QTR	INFINEON	类似代替	Advanced Planar Technology Low On-Resistance
IRF7379QPBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET

与AUIRF7379Q相关器件

型号	品牌	获取价格	描述	数据表
AUIRF7379QTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7416Q	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRF7416QTR	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRF7478Q	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRF7478QTR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRF7484Q	INFINEON	获取价格	汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 SO
AUIRF7484QTR	INFINEON	获取价格	Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRF7640S2	INFINEON	获取价格	DirectFETPower MOSFET
AUIRF7640S2TR	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7640S2TR1	INFINEON	获取价格	DirectFET Power MOSFET

与AUIRF7379Q相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

16
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

14
SL74HC10N：高性能三输入与非门解析
2024-09-03

93
AIC1781A 电池充电控制器深度解析
2024-09-03

83

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRF7379Q

AUIRF7379Q 数据手册

AUIRF7379Q 替代型号

与AUIRF7379Q相关器件

与AUIRF7379Q相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRF7379Q

AUIRF7379Q 数据手册

AUIRF7379Q 替代型号

与AUIRF7379Q相关器件

与AUIRF7379Q相关文章

您还可以找

您在本页遇到什么问题？