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AUIRF7665S2TR1

更新时间： 2024-09-17 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲放大器
页数 文件大小 规格书
11页 344K
描述
DirectFETPower MOSFET

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AUIRF7665S2TR1 数据手册

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PD - 96286  
AUIRF7665S2TR  
AUIRF7665S2TR1  
DirectFET™ Power MOSFET ‚  
AUTOMOTIVE GRADE  
• Advanced Process Technology  
V(BR)DSS  
100V  
• Optimized for Class D Audio Amplifier Applications  
• Low Rds(on) for Improved Efficiency  
• Low Qg for Better THD and Improved Efficiency  
• Low Qrr for Better THD and Lower EMI  
• Low Parasitic Inductance for Reduced Ringing and Lower EMI  
• Delivers up to 100W per Channel into 8Ω with No Heatsink  
• Dual Sided Cooling  
RDS(on) typ.  
51m  
62m  
Ω
Ω
max.  
RG (typical)  
Qg (typical)  
3.5  
Ω
8.3nC  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and Reliability  
• Lead free, RoHS and Halogen free  
DirectFET™ ISOMETRIC  
SB  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET  
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D  
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic  
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the  
voltage ringing that accompanies current transients.  
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
100  
Units  
VDS  
VGS  
V
Gate-to-Source Voltage  
± 20  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
@ TC = 25°C  
14.4  
10.2  
4.1  
D
D
D
D
@ TC = 100°C  
@ TA = 25°C  
@ TC = 25°C  
A
Continuous Drain Current, VGS @ 10V (Package Limited)  
I
I
77  
58  
Pulsed Drain Current  
DM  
Power Dissipation  
P
P
EAS  
@TC = 25°C  
@TA = 25°C  
30  
D
D
W
Power Dissipation  
2.4  
37  
56  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy (Tested Value)  
Avalanche Current  
mJ  
EAS(tested)  
IAR  
A
See Fig. 18a,18b,16,17  
EAR  
T
P
Repetitive Avalanche Energy  
Peak Soldering Temperature  
Operating Junction and  
mJ  
270  
T
J
-55 to + 175  
°C  
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
°C/W  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
12.5  
20  
63  
RθJA  
–––  
–––  
5.0  
RθJA  
RθJ-Can  
RθJ-PCB  
–––  
1.4  
Junction-to-PCB Mounted  
–––  
Linear Derating Factor  
0.2  
W/°C  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
01/05/10  
1234567...11

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