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AUIRF7675M2TR PDF预览

AUIRF7675M2TR

更新时间： 2024-11-21 01:10:59
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器脉冲晶体管
页数 文件大小 规格书
11页 432K
描述
Advanced Process Technology

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中文翻译

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AUIRF7675M2TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.17雪崩能效等级（Eas）：170 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：150 V最大漏极电流 (Abs) (ID)：90 A
最大漏极电流 (ID)：4.4 A最大漏源导通电阻：0.056 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：45 W最大脉冲漏极电流 (IDM)：72 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7675M2TR 数据手册

 浏览型号AUIRF7675M2TR的Datasheet PDF文件第2页浏览型号AUIRF7675M2TR的Datasheet PDF文件第3页浏览型号AUIRF7675M2TR的Datasheet PDF文件第4页浏览型号AUIRF7675M2TR的Datasheet PDF文件第5页浏览型号AUIRF7675M2TR的Datasheet PDF文件第6页浏览型号AUIRF7675M2TR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF7675M2TR  
Automotive DirectFET® Power MOSFET  
Advanced Process Technology  
Optimized for Class D Audio Amplifier Applications  
Low Rds(on) for Improved Efficiency  
Low Qg for Better THD and Improved Efficiency  
Low Qrr for Better THD and Lower EMI  
Low Parasitic Inductance for Reduced Ringing and Lower EMI  
Delivers up to 250W per Channel into 4with No Heat sink  
Dual Sided Cooling  
V(BR)DSS  
RDS(on) typ.  
max.  
Rg (typical)  
Qg (typical)  
150V  
47m  
56m  
1.2  
21nC  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and Reliability  
Lead free, RoHS and Halogen free  
S
D
D
S
G
 Automotive Qualified *  
DirectFET® ISOMETRIC  
Applicable DirectFET® Outline and Substrate Outline   
M2  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging  
platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout  
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application  
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal  
transfer in automotive power systems.  
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio  
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and  
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that  
accompanies current transients.  
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
AUIRF7675M2  
DirectFET Medium Can  
AUIRF7675M2TR  
Tape and Reel  
4800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
150  
±20  
18  
13  
4.4  
90  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TA = 25°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current   
A
IDM  
72  
PD @TC = 25°C  
PD @TA = 25°C  
EAS  
EAS (Tested)  
IAR  
EAR  
TP  
Power Dissipation   
Power Dissipation   
Single Pulse Avalanche Energy (Thermally Limited)   
Single Pulse Avalanche Energy   
Avalanche Current   
45  
2.7  
59  
W
mJ  
170  
A
mJ  
See Fig. 16, 17, 18a, 18b  
Repetitive Avalanche Energy   
Peak Soldering Temperature  
270  
°C  
TJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-12-14  
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中文翻译

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