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AUIRF7759L2TR1

更新时间： 2024-09-17 19:38:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 249K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRF7759L2TR1 数据手册

 浏览型号AUIRF7759L2TR1的Datasheet PDF文件第2页浏览型号AUIRF7759L2TR1的Datasheet PDF文件第3页浏览型号AUIRF7759L2TR1的Datasheet PDF文件第4页浏览型号AUIRF7759L2TR1的Datasheet PDF文件第5页浏览型号AUIRF7759L2TR1的Datasheet PDF文件第6页浏览型号AUIRF7759L2TR1的Datasheet PDF文件第7页 
PD - 96426  
AUTOMOTIVE GRADE  
AUIRF7759L2TR  
AUIRF7759L2TR1  
•
•
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and  
Reliability  
Automotive DirectFET® Power MOSFET ‚  
V(BR)DSS  
75V  
•
•
•
•
•
•
RDS(on) typ.  
1.8m  
2.3m  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
160A  
200nC  
•
•
Lead Free, RoHS Compliant and Halogen Free  
Automotive Qualified *  
S
S
S
S
D
D
G
S
S
S
S
DirectFET®ISOMETRIC  
L8  
Applicable DirectFET® Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®  
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-  
cesses. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®  
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and  
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-  
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of  
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this  
MOSFET a highly efficient, robust and reliable device for high current automotive applications.  
Max.  
75  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
±20  
160  
113  
26  
V
GS  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
I
@ TC = 25°C  
D
D
D
D
@ TC = 100°C  
@ TA = 25°C  
@ TC = 25°C  
A
375  
640  
125  
63  
DM  
P
P
P
@TC = 25°C  
@TC = 100°C  
@TA = 25°C  
Power Dissipation  
D
D
D
W
Power Dissipation  
3.3  
Power Dissipation  
EAS  
IAR  
257  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
See Fig.18a, 18b, 16, 17  
EAR  
Repetitive Avalanche Energy  
Peak Soldering Temperature  
Operating Junction and  
mJ  
270  
T
T
T
P
J
-55 to + 175  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
1.2  
RθJA  
RθJ-Can  
RθJ-PCB  
–––  
–––  
Junction-to-PCB Mounted  
Linear Derating Factor  
0.5  
0.83  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
03/28/12  
1234567...12

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