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AUIRF7805QTR

更新时间： 2024-11-08 01:19:27
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 208K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRF7805QTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：10 weeks
风险等级：5.18其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：13 A最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.011 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MS-012AAJESD-30 代码：R-PDSO-G8
湿度敏感等级：1元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.5 W最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7805QTR 数据手册

 浏览型号AUIRF7805QTR的Datasheet PDF文件第2页浏览型号AUIRF7805QTR的Datasheet PDF文件第3页浏览型号AUIRF7805QTR的Datasheet PDF文件第4页浏览型号AUIRF7805QTR的Datasheet PDF文件第5页浏览型号AUIRF7805QTR的Datasheet PDF文件第6页浏览型号AUIRF7805QTR的Datasheet PDF文件第7页 
PD – 96367B  
AUIRF7805Q  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
LowOn-Resistance  
Logic Level  
NChannelMOSFET  
SurfaceMount  
Available in Tape & Reel  
150°COperatingTemperature  
Automotive [Q101] Qualified  
Lead-Free,RoHSCompliant  
A
A
D
V(BR)DSS  
30V  
9.2m  
1
2
8
7
S
S
D
RDS(on) typ.  
Ω
3
4
6
5
S
D
D
max.  
11mΩ  
G
Top View  
ID  
13A  
Description  
Specifically designed for Automotive applications,  
these HEXFET® Power MOSFET's in a Dual SO-8  
package utilize the lastest processing techniques to  
achieveextremelylow on-resistanceper silicon area.  
Additional features of these Automotive qualified  
HEXFET Power MOSFET's are a 150°C junction  
operating temperature, fast switching speed and  
improved repetitive avalanche rating. These benefits  
combine to make this design an extremely efficient  
andreliabledeviceforuseinAutomotiveapplications  
and a wide variety of other applications.  
SO-8  
G
Gate  
D
Drain  
S
Source  
TheefficientSO-8packageprovidesenhancedthermal  
characteristicsanddualMOSFETdiecapabilitymaking  
it ideal in a variety of power applications. This dual,  
surface mount SO-8 can dramatically reduce board  
space and is also available in Tape & Reel.  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 12  
13  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
10  
A
100  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/24/11  
12345678

中文翻译

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AUIRF7805QTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7805Q INFINEON

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 Advanced Planar Technology Low On-Resistance

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