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AUIRFL014N

更新时间： 2024-11-21 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
11页 224K
描述
Power Field-Effect Transistor, 1.9A I(D), 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

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AUIRFL014N 数据手册

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AUTOMOTIVE GRADE  
AUIRFL014N  
HEXFET® Power MOSFET  
Features  
Advanced Planar Technology  
Low On-Resistance  
D
S
V(BR)DSS  
55V  
0.16  
Dynamic dV/dT Rating  
150°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) max.  
ID  
Ω
G
1.9A  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety  
of other applications.  
S
D
G
SOT-223  
AUIRFL014N  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
Tube  
Tape and Reel  
95  
2500  
AUIRFL014N  
AUIRFL014NTR  
AUIRFL014N  
SOT-223  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is  
not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal  
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is  
25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
2.7  
Units  
I
I
I
I
@ T = 25°C  
A
D
D
D
1.9  
@ T = 25°C  
A
A
1.5  
@ T = 70°C  
A
15  
DM  
2.1  
Power Dissipation (PCB Mount)  
Power Dissipation (PCB Mount)  
Linear Derating Factor (PCB Mount)  
Gate-to-Source Voltage  
W
W
P
P
@T = 25°C  
A
D
D
1.0  
@T = 25°C  
A
8.3  
W/°C  
V
±20  
V
GS  
EAS  
IAR  
48  
1.7  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
0.1  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
5.0  
V/ns  
°C  
-55 to + 150  
T
T
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
90  
Max.  
120  
60  
Units  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount, steady state)  
°C/W  
Junction-to-Ambient (PCB mount, steady state)  
50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 26, 2014  
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