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AUIRFR024N PDF预览

AUIRFR024N

更新时间： 2024-02-28 02:34:29
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 376K
描述
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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中文翻译

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AUIRFR024N 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.14其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：71 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：17 A最大漏极电流 (ID)：17 A
最大漏源导通电阻：0.075 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：45 W
最大脉冲漏极电流 (IDM)：68 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR024N 数据手册

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PD - 96355  
AUTOMOTIVE GRADE  
AUIRFR024N  
AUIRFU024N  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
LowOn-Resistance  
D
S
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
V(BR)DSS  
55V  
RDS(on) max.  
ID  
0.075  
17A  
Ω
G
l
l
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
D
Description  
S
D
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistancepersiliconarea.Thisbenefitcombinedwiththe  
fast switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of other  
applications.  
S
D
G
G
I-Pak  
D-Pak  
AUIRFR024N  
AUIRFU024N  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
17  
Units  
I
I
I
@ T = 25°C  
C
D
D
12  
A
@ T = 100°C  
C
68  
DM  
45  
Power Dissipation  
W
W/°C  
V
P
@T = 25°C  
C
D
0.3  
Linear Derating Factor  
± 20  
V
Gate-to-Source Voltage  
GS  
EAS  
IAR  
71  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
4.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
STG  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
3.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
50  
°C/W  
**  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/22/11  
1234567...13

中文翻译

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AUIRFR024N 替代型号

型号 品牌 替代类型 描述 数据表
IRFR1205TRPBF INFINEON

类似代替

 Ultra Low On-Resistance
IRFR024NTRPBF INFINEON

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 HEXFET® Power MOSFET
IRFR024NPBF INFINEON

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 HEXFET Power MOSFET

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