Datasheet > AUIRFN8459

AUIRFN8459

更新时间： 2023-09-03 20:36:32

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	534K
描述
40V 双 N 通道 HEXFET Power MOSFET，采用 PQFN 5 x 6 L 封装

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技术参数
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AUIRFN8459 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	QFN-8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.7
其他特性：	ULTRA LOW RESISTANCE	雪崩能效等级（Eas）：	66 mJ
外壳连接：	DRAIN	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	50 A
最大漏源导通电阻：	0.0059 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F6	湿度敏感等级：	1
元件数量：	2	端子数量：	6
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	320 A	参考标准：	AEC-Q101
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AUIRFN8459 数据手册

AUTOMOTIVE GRADE

AUIRFN8459

Features

V_DSS

R_{DS(on) typ.}

40V

 Advanced Process Technology

 Dual N-Channel MOSFET

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

4.8m

5.9m

max

I_D(Silicon Limited)

70A

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

I_D(Package Limited)

50A

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating temperature,

fast swithcing speed and improved repetitive avalanche rating.

These features combine to make this product an extremely

efficient and reliable device for use in Automotive and wide variety

of other applications.

DUAL PQFN 5X6 mm

Applications

Gate

Drain

Source

 12V Automotive Systems

 Brushed DC Motor

 Braking

 Transmission

Base Part Number

Package Type

Standard Pack

Form

Tape and Reel

Orderable Part Number

Quantity

4000

AUIRFN8459

Dual PQFN 5mm x 6mm

AUIRFN8459TR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V 

Continuous Drain Current, V_GS@ 10V

Max.

Units

I_D@ T_{C (Bottom)}= 25°C

I_D@ T_{C (Bottom)}= 100°C

I_D@ T_{C (Bottom)}= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

320

Power Dissipation

P_D@T_{C (Bottom)}= 25°C

Linear Derating Factor

0.33

W/°C

V_GS

Gate-to-Source Voltage

± 20

E_AS

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy 

Avalanche Current 

110

E_AS(Tested)

I_AR

See Fig. 14, 15, 22a, 22b

E_AR

T_J

T_STG

Repetitive Avalanche Energy 

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Submit Datasheet Feedback

May 12, 2015

12 3 4 5 6 7...10

中文翻译

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与AUIRFN8459相关器件

型号	品牌	获取价格	描述	数据表
AUIRFN8459TR	INFINEON	获取价格	Power Field-Effect Transistor
AUIRFP064N	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFP1405	INFINEON	获取价格	Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me
AUIRFP2602	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFP2907	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
AUIRFP2907Z	INFINEON	获取价格	HEXFET Power MOSFET
AUIRFP4004	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFP4110	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon,
AUIRFP4409	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFP4568	INFINEON	获取价格	Power Field-Effect Transistor

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